A 2.17-dB NF 5-GHz-band monolithic CMOS LNA with 10-mW DC power consumption
Journal
IEEE Transactions on Microwave Theory and Techniques
Journal Volume
53
Journal Issue
3
Pages
813-823
Date Issued
2005
Author(s)
Abstract
Design principles of CMOS low-noise amplifiers (LNAs) for simultaneous input impedance and noise matching by tailoring device size for R/sub opt/=50 /spl Omega/ are introduced. It is found that R/sub opt/ close to 50 /spl Omega/ can be obtained by using small devices (110 /spl mu/m) and small currents (5 mA). Based on the proposed approach, CMOS LNAs with on-chip input and output matching networks on thin (/spl sim/20 /spl mu/m) and normal (750 /spl mu/m) substrates are implemented. It is found that the noise figure (NF) (3.0 dB) of the CMOS LNA at 5.2 GHz with 10-mW power consumption on the normal (750 /spl mu/m) substrate can be reduced to 2.17 dB after the substrate is thinned down to /spl sim/20 /spl mu/m. The reduction of NF is attributed to the suppression of substrate loss of the on-chip inductors. The input return loss (S/sub 11/) is smaller than -22 dB across the entire band of interest (5.15-5.35 GHz). An input 1-dB compression point (P/sub 1 dB/) of -8.3 dBm and an input third-order intercept point of 0.8 dBm were also obtained for the LNA on the thin substrate.
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Type
journal article
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