Comparison of photoluminescence properties between MBE and MOCVD grown InGaN/GaN multiple quantum well structures
Journal
Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
Journal Volume
9
Journal Issue
2
Pages
103-108
Date Issued
2002
Author(s)
Type
journal article
