Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
Journal
Applied Physics Letters
Journal Volume
77
Journal Issue
19
Pages
2988-2990
Date Issued
2000
Author(s)
Lin, Y.-S.
Ma, K.-J.
Hsu, C.
Feng, S.-W.
Cheng, Y.-C.
Liao, C.-C.
Yang, C.C.
Chou, C.-C.
Lee, C.-M.
Chyi, J.-I.
Abstract
The information on the variations of indium composition, aggregation size, and quantum-well width is crucially important for understanding the optical properties and, hence, fabricating efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple quantum wells with indium content in the range of 15%–25% (grown with metal–organic chemical-vapor deposition). A lower nominal indium content led to a better confinement of indium-rich clusters within InGaN quantum wells. The InGaN/GaN interfaces became more diffusive, and indium-rich aggregates extended into GaN barriers with increasing indium content. It was also observed that indium-rich precipitates with diameter ranging from 5 to 12 nm preferred aggregating near V-shaped defects.
Type
journal article