C O2 laser rapid-thermal-annealing Si Ox based metal-oxide-semiconductor light emitting diode
Journal
Applied Physics Letters
Journal Volume
91
Journal Issue
7
Date Issued
2007
Author(s)
Abstract
Structural damage enhanced near-infrared electroluminescence (EL) of a metal-oxide-semiconductor light emitting diode (MOSLED) made on Si Ox film with buried nanocrystallite Si after C O2 laser rapid thermal annealing (RTA) at an optimized intensity of 6 kW cm2 for 1 ms is demonstrated. C O2 laser RTA induced oxygen-related defects are capable of improving Fowler-Nordheim tunneling mechanism of carriers at metal/ Si Ox interface. The C O2 laser RTA Si Ox film reduces Fowler-Nordheim tunneling threshold to 1.8 MVcm, facilitating an enhanced EL power of an indium tin oxide/ Si Ox p-SiAl MOSLED up to 50 nW at a current density of 2.3 mA cm2. © 2007 American Institute of Physics.
Subjects
Carbon dioxide lasers; Current density; Electroluminescence; MOS devices; Rapid thermal annealing; Fowler-Nordheim tunneling; Tunneling threshold; Light emitting diodes
Type
journal article