Fabrication and Characterization of Periodically Poled Piezoelectric Thin Film
Date Issued
2009
Date
2009
Author(s)
Tsai, Chia-Hao
Abstract
Deposition of PZT thin films on 1737 glass substrates was studied in this thesis. A buffer layer of titanium dioxide and an adhesive layer of titanium were sputtered on the glass substrate before the deposition of platinum bottom electrode. This layered structure was annealed in vacuum to decrease the residual stress. These treatments ensure a successful preparation of PZT thin film on glass. An RF sputter was employed to deposit PZT films at room temperature. After annealing at 650℃, perovskite structure dominates PZT film with (100) in the majority. The forward and reverse remanent polarization is 9.17μC/cm2 and 9.38μC/cm2 respectively while the forward and reverse coercive field is 5.83 MV/m and 8.79 MV/m. Making use of the micro fabrication process, a metal-insulator-metal (MIM) structure with PZT thin films was constructed. The top platinum electrode was prepared with lift off technique. The PZT thin film is then periodically polarized by the electrode pattern. The measured S-parameters show that the periodically polarized PZT thin film absorbs more RF energy than its unidirectional polarized counterpart.
Subjects
PZT
piezoelectric thin film
RF sputter
MEMS
periodically poled
Type
thesis
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