Concentration dependence of carrier localization in InN epilayers
Journal
Applied Physics Letters
Journal Volume
89
Journal Issue
13
Date Issued
2006
Author(s)
Abstract
The authors studied the concentration dependence of carrier localization in InN epilayers using time-resolved photoluminescence (PL). Based on the emission-energy dependence of the PL decays and the PL quenching in thermalization, the localization energy of carriers in InN is found to increase with carrier concentration. The dependence of carrier concentration on the localization energy of carriers in InN can be explained by a model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states. They suggest that carrier localization originates from the potential fluctuations of randomly located impurities.
SDGs
Type
journal article