Integrated Study of Systematic Innovation Theory and Wafer Thinning Techniques
Date Issued
2009
Date
2009
Author(s)
Lin, Chuan-Chieh
Abstract
A systematic innovation process for academic research works was proposed in this dissertation to help scholars analyze technology research status, trends, and problems as well as find out innovation chances while they are getting in a new technology field.he TRIZ theory, the Mind Mapping® method, and technical roadmap analysis were integrated and an academic literature matrix analysis method was proposed in this systematic innovation process to induce innovative research ideas and solutions. Some improvements in TRIZ theory were also proposed in this research.ith an increasing demand of thinner chips and the stacked-die packages, backside thinning of fully processed IC wafers has become a widely used technique in advanced semiconductor manufacturing. The systematic innovation process was integrated in the research of the silicon wafer thinning technique in this dissertation to analyze the technology research status, trends and problems. As the results of this innovation process, two patentable innovative concepts and three potential research topics were generated and identified. systematic experimental study was conducted with the Taguchi method to obtain the thinning parameters that could successfully reduce both wafer thickness and residual stress after the grinding process. Also more experiments were performed to investigate the feasibility and associated problems of wafer thinning process in batch type. n the study on the warping problems for thinned wafers, the relation between warpage and wafer thickness for wafers with different stress status on the front side were investigated with the same backside wafer thinning parameters. The results shown the stress on the front side of wafers represent dominant effects on the warping problems of thinned wafers. ince the failure strength of silicon is crucial in determining the manufacturing yield, operational reliability and device performance of semiconductor devices, the effects of the wafer backside roughen etching and the metal deposition treatment toward strength of thinned silicon dies have been investigated in this dissertation. The results represented the wafer backside metal processing used in this research could have a good performance to enhance the strength of thinned silicon dies, i.e., the semiconductor manufacturer could have the chance to improve the mechanical performance as well as electrical or thermal performance of thinned silicon dies while backside metal processing.
Subjects
systematic innovation
TRIZ
wafer thinning
warpage
die strength
Type
thesis
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