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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime
Details
Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime
Journal
International Symposium on VLSI Technology, Systems, and Applications
Date Issued
2007
Author(s)
CHEE-WEE LIU
Yang, Y.-J.
Chang, S.T.
CHEE-WEE LIU
DOI
10.1109/VTSA.2007.378950
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-34548815012&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/332390
Type
conference paper
