A Study of Field-Effect-Transistor with Nanoparticle Catalyst-grown Carbon Nanotube
Date Issued
2005
Date
2005
Author(s)
Huang, Chi-Hua
DOI
zh-TW
Abstract
Flexible electronics and continuous miniaturization of current semiconductor technology are a technology roadmap that research and industries are devoted to pursue in next generation. Flexible electronics involves manufacturing that does not require nearly 2 billion fabs, and is environmentally responsible. Some of these technologies involve semiconductors fabricated on plastic substrates. Others involve organic semiconductors made with materials not seen in today’s semiconductor industry. Carbon nanotubes that possess semiconductor characteristics and nano-scale size also combine strength and flexibility, so they are excellent candidates for flexible electronics. The latest result of the carbon nanotube on polyimide reported its mobility at the same order of magnitude, but slightly lower to that in polycrystalline silicon. The paper presents the field-effect transistor (FET) with nanoparticle catalyst-grown carbon nanotubes (CNT) as device p-channels or n-channels. The nanoparticle material of Fe3O4 is newly selected as an experimental catalyst due to its size down to be around 6 nm that allows the growth of single-wall carbon nanotube. The carbon nanotubes were grown across source-drain electrodes in FETs. The present CNT-based device possesses p-type or/and ambipolar characteristics. The on/off switching ratio of p-type CNT-FET achieves a magnitude of 104. Meanwhile, the CNT-FET exhibits ambipolar characteristics that have both n-channel and p-channel effects on the same device. In other words, it is feasible to manufacture CMOS device in one device rather than the integration of p-MOS and n-MOS devices.
In addition, by taking advantages of nanoparticles and its growth characterisctics, the attempt to apply electrical fields for particle manipulation and to manufacture directional growth of CNT was to address particle in specific sites with specific CNT growth direction. The total internal reflection fluorescent microscopy was used in observation of nanoparticles manipulated in liquid under external fields. The preliminary result demonstrates the feasible visualization of particle movement in near-wall region. However, the electric field applied generates bubbles in liquid at both electrodes, reducing the quality of visual images. In addition, use of the slanted surface has been proven to grow directional CNTs in this study. With the use of anisotropic etched surface as a CNT growing substrate of the nanoparticles, the SEM picture demonstrates its feasibility of directional growth of CNTs. Based on the results of the present study, the CNT addressing and growth direction are potential to make the realization of CNT-based FET in near future.
Subjects
奈米碳管
場效電晶體
奈米碳管場效電晶體
指向性
奈米顆粒
奈米觀測
化學氣相沉積
carbon nanotube
field-effect-transistor
carbon nanotube field-effect-transistor
directionality
nanoparticle
nano-measurement
chemical vapor deposition
Type
thesis