Tunable Photoinduced Carrier Transport of a Black Phosphorus Transistor with Extended Stability Using a Light-Sensitized Encapsulated Layer
Journal
ACS Photonics
Journal Volume
3
Journal Issue
6
Pages
1102-1108
Date Issued
2016
Author(s)
Ho P.-H.
Li M.-K.
Sankar R.
Shih F.-Y.
Li S.-S.
Chang Y.-R.
Wang W.-H.
Chou F.-C.
Abstract
In this article, we propose a novel approach to demonstrate tunable photoinduced carrier transport of a few-layered black phosphorus (BP) field-effect transistor (FET) with extended air stability using a “light-sensitized ultrathin encapsulated layer”. Titanium suboxide (TiOx) ultrathin film (approximately 3 nm), which is an amorphous phase of crystalline TiO2 and can be solution processed, simultaneously exhibits the unique dual functions of passivation and photoinduced doping on a BP FET. The photoinduced electron transfer at TiOx/BP interfaces provides tunable n-type doping on BP through light illumination. Accordingly, the intrinsic hole-dominated transport of BP can be gradually tuned to the electron-dominated transport at a TiOx/BP FET using light modulation, with enhanced electron mobility and extended air stability of the device. The novel device structure consisting of a light-sensitized encapsulated layer with controllable and reversible doping through light illumination on BP exhibits great potential for the future development of stable BP-based semiconductor logic devices or optoelectronic devices.
Publisher
American Chemical Society
Type
journal article