Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well
Journal
Solid State Communications
Journal Volume
150
Journal Issue
25-26
Pages
1104-1107
Date Issued
2010
Author(s)
Abstract
We have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well. With increasing temperature T, a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed. Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T. © 2010 Elsevier Ltd. All rights reserved.
Type
journal article