Mechanisms of Isothermal EPI-Grow of Hg1-xCdxTe
Resource
Proceedings of 1984 International Electronic Devices and Materials Symposium, p.335-337
1984 International Electronic Devices and Materials Symposium, Hsinchu(1984.09)
Journal
Proceedings of 1984 International Electronic Devices and Materials Symposium
Pages
335-337
Date Issued
1984-09
Date
1984-09
Author(s)
Yang, Seng-Jenn
Type
conference paper