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  4. CMOS front end components for micropower RF wireless systems.
 
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CMOS front end components for micropower RF wireless systems.

Journal
Proceedings of the 1998 International Symposium on Low Power Electronics and Design, 1998, Monterey, California, USA, August 10-12, 1998
Pages
[d]11-15
Date Issued
1998
Author(s)
Sanchez, Henry
Rofougaran, Razieh
Kaiser, William J.
TSUNG-HSIEN LIN  
DOI
10.1145/280756.280760
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/499135
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031630593&doi=10.1145%2f280756.280760&partnerID=40&md5=c9fcc30bf913b80ec8f9f15f0dd1215a
URL
https://doi.org/10.1145/280756.280760
Abstract
New applications have recently appeared for a low power, low cost, `embedded radio'. These wireless interfaces for handheld mobile nodes and Wireless Integrated Network Sensors (WINS) must provide spread spectrum signaling for multi-user operation at 902-928 MHz. Cost considerations motivate the development of complete micropower CMOS RF systems operating at previously unexplored low power levels. Micropower CMOS VCO and mixer circuits, developed for these emerging narrow-band communication systems, are reported here. Design methods combining high-Q inductors and weak inversion MOSFET operation enable the lowest reported operating power for RF front end components including a voltage-controlled oscillator (VCO) and mixer operating at frequencies of 400 MHz-1 GHz. In addition, the VCO, by virtue of its high-Q inductive components, displays the lowest reported phase noise for 1 GHz CMOS VCO systems for any power dissipation.
Other Subjects
Mixer circuits; Mobile radio systems; MOSFET devices; Variable frequency oscillators; Micropower radio frequency wireless systems; CMOS integrated circuits
Type
conference paper

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