Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN
Journal
Applied Physics Letters
Journal Volume
98
Journal Issue
25
Date Issued
2011
Author(s)
Abstract
The screening effect of heavy-hole LO–phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.
Type
journal article