Performance enhancement of silicon nanowire memory by tunnel oxynitride, stacked charge trap layer, and mechanical strain

Journal

IEEE Electron Device Letters

Journal Volume

33

Journal Issue

1

Pages

20-22

Date Issued

2012

Author(s)

Huang, C.J.

Yang, C.H.

Hsueh, C.Y.

Lee, J.H.

Chang, Y.T.

DOI

10.1109/LED.2011.2173789

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/498841

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84655167743&doi=10.1109%2fLED.2011.2173789&partnerID=40&md5=3f00cdc1b4efdf8579baca60b91b54fd

Type

journal article