Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
New user? Click here to register.
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
2 /spl mu/m emission from Si/Ge heterojunction LED and up to 1.55 /spl mu/m detection by GOI detectors with strain-enhanced features
Details
2 /spl mu/m emission from Si/Ge heterojunction LED and up to 1.55 /spl mu/m detection by GOI detectors with strain-enhanced features
Resource
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Journal
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Pages
-
Date Issued
2005-12
Date
2005-12
Author(s)
Liao, M.H.
Yu, C.Y.
Huang, C.F.
Lin, C.H.
Lee, C.J.
Yu, M.H.
Chang, S.T.
Liang, C.Y.
Lee, C.Y.
Guo, T.H.
Chang, C.C.
Liu, C.W.
DOI
10.1109/IEDM.2005.1609532
DOI
N/A
URI
http://ntur.lib.ntu.edu.tw//handle/246246/200704191001122
Type
journal article
File(s)
Loading...
Loading...
Download
Name
01609532.pdf
Size
752.16 KB
Format
Adobe PDF
Checksum
(MD5):6fedd7e58f696e90d5fa76e1ce7893bf
