A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage
Journal
International Electron Devices Meeting, IEDM
Date Issued
2009
Author(s)
Abstract
For the first time, growth of high-quality Ge-rich Ge 1-x Si x (0 ¿ × ¿ 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge 1-x Si x and a better thermal stability of the nickel germanide on Ge 1-x Si x were observed. A higher rectifying ratio with a reduced diode leakage current in n + -Ge 1-x Si x /p-Ge 1-x Si x is compared with n + -Ge/p-Ge. These results indicate that it is suitable for Ge 1-x Si x to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.
SDGs
Type
conference paper