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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage
Details
A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage
Journal
International Electron Devices Meeting, IEDM
Date Issued
2009
Author(s)
CHEE-WEE LIU
DOI
10.1109/IEDM.2009.5424246
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-77952330177&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/350495
Type
conference paper
