Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells
Journal
Applied Physics Letters
Journal Volume
85
Journal Issue
9
Pages
1526-1528
Date Issued
2004-06
Author(s)
Abstract
The optoelectronic properties of undoped type-II GaAs0.7Sb 0.3/GaAs (100) multiple quantum wells were investigated using photoluminescence and photoconductivity measurements. It was observed that the origin of the persistent photoconductivity (PPC) effect arises from the spatial separation of photoexcited electrons and holes. It was also observed that the photoexcited carriers involved in the PPC effect were related to the valence-band to conduction-band transition. It was found that the decay rate of the PPC increases gradually with increasing temperature.
Other Subjects
Activation energy; Detectors; Energy gap; Interfaces (materials); Light emitting diodes; Mathematical models; Molecular beam epitaxy; Optical fibers; Photoconductivity; Photons; Quenching; Semiconducting gallium compounds; X ray diffraction analysis; Decay exponents; Energy barriers; Monochromatic radiation; Photoexcited electrons; Semiconductor quantum wells
Type
journal article