A V-band GaAs HEMT uniplanar monolithic integrated antenna and receiver front end
Resource
Microwave Symposium Digest, 2003 IEEE MTT-S International
Journal
Microwave Symposium Digest, 2003 IEEE MTT-S International
Pages
-
Date Issued
2003-06
Date
2003-06
Author(s)
DOI
0149-645X
Abstract
A V-band monolithic integrated folded-slot balanced mixer with LO source on the same chip is presented for the first time. The circuit is designed based on the uniplanar structures such as coplanar waveguide (CPW) and slotline. The embedding impedance of the folded-slot antenna is calculated by finite-difference time-domain (FDTD) method and compared with the impedance of the SchottkyBarrier diode at 60 GHz to design the mixer. The V-band voltage control oscillator (VCO) is developed based on the 0.15 μm GaAs HEMT technology. A reduced-size CPW-toslotline transition is designed for the LO pumping network. The measured results of the VCO, transition, and mixer are included.
Other Subjects
Electric impedance; Finite difference method; Microprocessor chips; Mixer circuits; Monolithic integrated circuits; Schottky barrier diodes; Slot antennas; Time domain analysis; Variable frequency oscillators; Waveguides; Pumping networks; High electron mobility transistors
Type
journal article
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