GaAsSb type-II Quantum Devices
Date Issued
2004-10-31
Date
2004-10-31
Author(s)
DOI
922215E002024
Abstract
We report the grown and fabrication of
GaAsSb/GaAs type-II quantum wells (QWs)
and lasers. The photoluminescence emission
wavelength of the type-II quantum well
reaches 1300m with a FWHM of 80 meV. On
the results of the type II GaAsSb/GaAs single
quantum-well laser diode, an emission
wavelength of 1290nm and a low threshold
current density of 300A/cm2 are
demonstrated at room temperature. The
thermal properties of the type-II lasers were
also investigated. The characteristic
temperature of the lasers is within 50 ~ 60K.
By measuring the relation between the
spontaneous emission intensity and injection
current of the lasers, we obtained the
dominant mechanisms in the threshold
current. It is found that the Auger
recombination dominates the characteristic
temperature at high operation temperature.
Subjects
molecular beam epitaxy
Sb-based compound semiconductor
GaAsSb quantum well
characteristic
temperature
temperature
Publisher
臺北市：國立臺灣大學電子工程學研究所
Type
report
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