Imide-epoxy Polymers: Synthesis, Characterization and Opto-electronics
Date Issued
2016
Date
2016
Author(s)
Li, Nian-Ting
Abstract
This work presents synthesis and characterization of different imide-epoxy polymers, namely DIDE-TAPA and DIDE-DO3 to be used as polymeric layer in organic thin film transistors. NDI-C7F9, a tetracarboxylic diimide derivative, was used as n-type semiconducting layer of OTFT due to its good stability in air. In addition, pentacene, a widely used p-type semiconductor, was also used as a semiconducting layer. Organic thin film transistors were fabricated by spinning the imide-epoxy polymers as dielectric layer/polymeric layer on Si/SiO2 substrates, and then depositing the semiconducting layers in vacuum. The electron mobility and on/off ratio of all devices measured in the air were about 10-2~10-3 cm2V-1s-1 and 102~103, respectively. Using triaminophenylamine (TAPA) as a crosslinker could result in memory effect. The device, using NDI-C7F9 as semiconductor layer and DIDE-TAPA as polymeric layer, exhibited a memory window of approximately 60V. Moreover, the introduction of polymers with D-A structure as the polymeric layer could possibly enhance the memory effect of the OTFT devices. The devices using NDI-C7F9 as semiconductor layer and DIDE-DO3-TAPA as polymeric layer exhibited a memory window of approximately 70V. Furthermore, better film quality would favor the ordered arrangement of semiconductors. Hence the contact angle, dielectric constant and thermal stabilities of dielectric layer such as were also studied in this work. Moreover, the investigation of the morphological influence on semiconducting layers was performed by atomic force microscopy (AFM) scanning electron microscope (SEM) and X-ray diffraction (XRD)
Subjects
organic thin film transistors (OTFTs)
imide-epoxy
dielectric layer
memory effect
Type
thesis
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