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College of Science / 理學院
Applied Physics / 應用物理研究所
In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications
Details
In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications
Journal
International Electron Devices Meeting 1995
Pages
383-386
Date Issued
1995
Author(s)
Passlack, Matthias
MINGHWEI HONG
Mannaerts, Joseph P
Chu, SNG
Opila, Robert L
Moriya, Netzer
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/315715
Type
conference paper