First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels
Journal
Technical Digest - International Electron Devices Meeting, IEDM
ISBN
9798350327670
Date Issued
2023-01-01
Author(s)
Tu, Chien Te
Hsieh, Wan Hsuan
Chen, Yu Rui
Huang, Bo Wei
Liao, Yu Tsung
WEI-JEN CHEN
Liu, Yi Chun
Cheng, Chun Yi
Chou, Hung Chun
Lu, Hao Yi
Hsin, Cheng Hsien
He, Geng Min
Woo, Dong Soo
Chueh, Shee Jier
Abstract
Monolithic 3D stacked Ge0.9Sn0.1 nanosheet and Ge0.75Si0.25 nanosheet complementary FETs with multiple P/N junction isolation by in-situ doped CVD epitaxy are experimentally demonstrated. Heterogeneous channels with common single work function metal gate structure are fabricated as a CMOS inverter with the matched VT and good voltage transfer characteristics. VT tuning is achieved individually by the band alignment of GeSi and GeSn for n-channel and p-channel, respectively, for the first time. The Hf0.2Zr0.8O2 gate stacks with extremely high ? of 47 are integrated to enhance the ION of CFET for high performance. The monolithic stacked heterogeneous complementary FETs without the need of wafer bonding, dielectric isolation, selective epitaxial growth, and dual work function metal can simplify the process for transistor 3D stacking.
Type
conference paper