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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
InSb p-channel metal-oxide-semiconductor field-effect transistor prepared by photoenhanced chemical vapor deposition
Details
InSb p-channel metal-oxide-semiconductor field-effect transistor prepared by photoenhanced chemical vapor deposition
Journal
Applied Physics Letters
Journal Volume
63
Journal Issue
26
Pages
3622-3624
Date Issued
1993
Author(s)
Liu, B.-D.
Lee, S.-C.
Liu, K.-C.
Sun, T.-P.
Yang, S.-J.
SI-CHEN LEE
DOI
10.1063/1.110068
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498746
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-20844458558&doi=10.1063%2f1.110068&partnerID=40&md5=f4bf614fd56d6d03b264cf3b86348f3b
Type
journal article