InSb p-channel metal-oxide-semiconductor field-effect transistor prepared by photoenhanced chemical vapor deposition

Journal

Applied Physics Letters

Journal Volume

63

Journal Issue

26

Pages

3622-3624

Date Issued

1993

Author(s)

Liu, B.-D.

Lee, S.-C.

Liu, K.-C.

Sun, T.-P.

Yang, S.-J.

DOI

10.1063/1.110068

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/498746

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-20844458558&doi=10.1063%2f1.110068&partnerID=40&md5=f4bf614fd56d6d03b264cf3b86348f3b

SDGs

[SDGs]SDG7

Type

journal article