Nonlinear Absorption in a GaAs Waveguide Just Above Half the Band Gap
Journal
IEEE Journal of Quantum Electronics
Journal Volume
30
Journal Issue
5
Pages
1172-1175
Date Issued
1994
Author(s)
Abstract
Nonlinear absorption in a GaAs waveguide is measured with photon energies near half the band-gap energy by employing single-beam and pump-probe attenuation techniques. Two-photon absorption followed by free-carrier absorption are the dominant nonlinear absorption mechanisms that are included in a model that fits the experimental data. © 1994 IEEE
Other Subjects
Attenuation; Charge carriers; Color centers; Electric losses; Electron absorption; Electron transitions; Energy gap; Photons; Refractive index; Semiconducting gallium arsenide; Solid state lasers; Ultrafast phenomena; Free carrier absorption; Gallium arsenide waveguide; Nonlinear photon absorption; Pump probe attenuation techniques; Single beam attenuation techniques; Optical waveguides
Type
journal article