Characterization of Light-Emitting Diodes Fabricated by Plasma Enhanced Atomic Layer Deposition
Date Issued
2014
Date
2014
Author(s)
Lee, Po-Ting
Abstract
Abstract
In this thesis, we present the operational procedure of plasma enhanced atomic layer deposition (PE-ALD) system and the growth, analysis, fabrication, characterization of Si-based oxide light emitting devices. The following instrument of photoluminescence (PL), X-ray photoelectron spectroscope (XPS), ellipsometry, surface profiler were used to characterize the thickness, growth rate, composition, and crystalline properties of the materials grown by the PE-ALD system.
From the data analysis made on the ellipsometry and surface profiler measurement, we identified the materials growth rate under ALD mode correctly. From the XPS data analysis, we identify the material’s binding energy position. From above analysis, we have shown four oxide material including ZnO, HfO2, Al2O3, Ga2O3 and two nitride material including AlN, GaN from our PE-ALD system.
Si-based Light-emitting devices base upon the Thermal ALD-grown oxide and PE ALD-grown oxide were further fabricated and characterized. Three different multilayer oxide light-emitting devices were fabricated by Thermal ALD. From the current-voltage, electroluminescence (EL), we prove that double layer oxide light-emitting devices had higher light-emitting intensity. Oxide light-emitting devices were also fabricated by PE ALD system. Compare to devices fabricated by Thermal ALD system, the PE ALD-grown devices had better electrical characteristics and the light-emitting spectrum can be matched to human vision sensitivity.
Subjects
電漿輔助型原子層沉積系統
發光二極體
Type
thesis
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