Experimental Evidence for Formation of Ni-Al Compound in Flip-Chip Joints Under Current Stressing
Resource
Journal of ELECTRONIC MATERIALS, 40(10), 2076-2080
Journal
Journal of ELECTRONIC MATERIALS
Journal Volume
40
Journal Issue
10
Pages
2076-2080
Date Issued
2011
Date
2011
Author(s)
Abstract
The materials interactions on the under bump metallization (UBM) side of flip-chip solder joints during current stressing were studied by using high-resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM). Flip-chip solder joints with sputtered Al/Ni(V)/Cu UBM were subjected to current stressing at an ambient temperature of 150°C. It was found that a layer of Ni-Al phase, presumably NiAl 3 according to energy-dispersive x-ray spectroscopy (EDX) measurements, was observed at the Al/Ni(V) interface. In addition, evidence for the formation of a nonconductive oxide layer at the NiAl 3/Ni(V) interface was observed. This nonconductive oxide layer was responsible for diverting electron current away from the porous region. © 2011 TMS.
Type
journal article
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