Mode-Locking and Car r ier Dynamics of Semiconductor Laser s
Date Issued
2000-07-31
Date
2000-07-31
Author(s)
DOI
892112M002034
Abstract
This project studies mode-locking
techniques for semiconductor lasers and
develops new semiconductor materials for
better mode-locking performance. In the
mode-locking techniques, we use active
mode-locking technique for short-pulse
generation and develop new technique,
named self-hybrid mode-locking. Using
active mode-locking technique, we achieve
the generation of 10-15 ps short pulses with
the tuning range of 62 nm. For self-hybrid
technique, RF modulation at the subharmonic
of pulse repetition frequency is used. By
suitable biasing condition, the carrier density
inside the gain media can be lower than
transparency carrier density, and the gain
medium will turn into a saturable absorber.
Both active and passive mode-locking
mechanisms operate in the same gain region
without the necessity of additionally
integrated absorbers. Self-hybrid modelocking
can generate pulses as short as 2 ps.
In the material development, we had
fabricated semiconductor optical amplifiers
with the bandwidth nearly 300 nm..
techniques for semiconductor lasers and
develops new semiconductor materials for
better mode-locking performance. In the
mode-locking techniques, we use active
mode-locking technique for short-pulse
generation and develop new technique,
named self-hybrid mode-locking. Using
active mode-locking technique, we achieve
the generation of 10-15 ps short pulses with
the tuning range of 62 nm. For self-hybrid
technique, RF modulation at the subharmonic
of pulse repetition frequency is used. By
suitable biasing condition, the carrier density
inside the gain media can be lower than
transparency carrier density, and the gain
medium will turn into a saturable absorber.
Both active and passive mode-locking
mechanisms operate in the same gain region
without the necessity of additionally
integrated absorbers. Self-hybrid modelocking
can generate pulses as short as 2 ps.
In the material development, we had
fabricated semiconductor optical amplifiers
with the bandwidth nearly 300 nm..
Subjects
Self-hybrid mode-locking
modelocking
semiconductor laser
semiconductor optical amplifier
Publisher
臺北市:國立臺灣大學光電工程學研究所
Type
report
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