Amorphous silicon TFT capacitance model using an effective temperature approach
Resource
Electronics Letters
Journal
Electronics Letters
Pages
-
Date Issued
1993-11
Date
1993-11
Author(s)
Chen, S.S.
DOI
0013-5194
Abstract
An analytical capacitance model for a-Si:H thin film transistors, that considers deep and tail states simultaneously, is presented. Using an effective temperature approach and a charge-oriented concept, the localised deep and tail states have been considered in the capacitance model. As verified by the published data, this analytical capacitance model provides an accurate prediction of the C-V characteristics of an a-Si:H thin film transistor. © 1993, The Institution of Electrical Engineers. All rights reserved.
Subjects
Amorphous semiconductors; Silicon; Thin film transistors
SDGs
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
00247628.pdf
Size
176.6 KB
Format
Adobe PDF
Checksum
(MD5):6d6396bdb48641b4bdfae22ef1c177d2