以分子束磊晶法成長氮化鎵系列材料（三）
Date Issued
2001-07-31
Date
2001-07-31
Author(s)
DOI
892215E002054
Abstract
We report the investigation on the
growth conditions and optical properties of
cubic GaN films grown on (001) GaAs
substrate by using RF plasma assisted gas
source MBE. The cubic GaN films were
deposited at different Ga to N flux ratios that
were determined by deposition rates directly.
Three growth regimes, namely, Ga droplet,
intermediate Ga stable, and N stable regime,
are defined in the growth diagram. Optical
quality of these films was determined by
using photoluminescence (PL). Micro-Raman
scattering were performed to analyze the
crystallinity of the films. Optimal growth
condition of cubic GaN is on the boundary of
intermediate Ga stable regime and Ga droplet
regime.
Subjects
cubic GaN
RF plasma assisted
gas source MBE
gas source MBE
Publisher
臺北市：國立臺灣大學電機工程學系暨研究所
Type
report
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