Evidence of nitrogen reorganization in GaAsSbN alloys
Journal
Japanese Journal of Applied Physics.
Journal Volume
51
Journal Issue
2
Pages
022605
Date Issued
2012-01
Author(s)
Abstract
In this report, the effects of thermal annealing properties on dilute GaAsSbN alloys grown on GaAs substrates using gas-source molecular beam epitaxy were investigated by photoreflectance (PR) and Raman spectroscopy. The PR spectra of the annealed GaAsSbN showed the up shift of dominant near band edge transition as compared to the as-grown samples. The observed shift can be attributed to the chemical change of the second-nearest-neighbor atoms to the N atoms. Raman spectroscopy analysis yielded further insight on the atomic configuration of post annealed GaAsSbN. The plausible physical mechanisms induced by thermal reorganization in GaAsSbN alloys were presented and discussed.
SDGs
Type
journal article