Simulation, Process and Measurement for TVS (Transient Voltage Suppressor) Diodes with Different Doping Concentrations in Edge
Date Issued
2008
Date
2008
Author(s)
Hai-Ning, Wang
Abstract
AbstractVS (Transient Voltage Suppressor) is widely used to protect vulnerable circuits from electrical overstress such as that caused by electrostatic discharge, inductive load switching and induced lightning. Within the TVS, damaging voltage spikes are limited by clamping or avalanche action of a rugged silicon pn junction which reduces the amplitude of the transient to a nondestructive level. n a circuit, the TVS should be“invisible”until a transient appears. Electrical parameters such as breakdown voltage (V(BR)), standby leakage current (ID), and capacitance should have no effect on normal circuit performance.n this work, we proposed some simple modifications on the fabrication steps to effectively reduce the leakage current caused by the edge effect on the highly doped diode. The modifications include (1) blanket implantation and (2) LOCOS structure to reduce edge effect. Better leakage performance and breakdown voltage are achieved in the new proposed diodes. We also discussed the capacitance and surge performance in new structure diodes. The capacitance will be affected by edge uniformity but majorly impacted by the in main junction implantation dosage. And in surge performance, the major impact is also come from the main junction implantation dosage where causes different capacitance and resistance. High dosage will cause high capacitance / low resistance and get higher surge withstanding capability. We believed that this technique can be applied in protection device for better performance.
Subjects
Diode
Type
thesis
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