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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect
Details
Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect
Journal
ECS Transactions
Journal Volume
58
Journal Issue
7
Pages
339-344
Date Issued
2013
Author(s)
Lu, H.-W.
Hwu, J.-G.
JENN-GWO HWU
DOI
10.1149/05807.0339ecst
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84904885163&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/378072
Type
conference paper
