Using autocloning effects to develop broad-bandwidth, omnidirectional antireflection structures for silicon solar cells
Resource
Energy Express, 18(S3), A421-A431
Journal
Optics Express
Pages
A421
Date Issued
2010
Date
2010
Author(s)
Lee, Y.C.
Tseng, S.C.
Chen, H.L.
Yu, C.C.
Cheng, W.L.
Du, C.H.
Lin, C.H.
Abstract
In this study, we used the autocloning effect on pyramid structures to develop broad-bandwidth, omnidirectional antireflection structures for silicon solar cells. The angular dependence of reflectance on several pyramid structures was systematically investigated. The deposition of three-layer autocloned films reduced the refractive index gap between air and silicon, resulting in an increase in the amount of transmitted light and a decrease in the total light escaping. The average reflectance decreased dramatically to ca. 2-3% at incident angles from 0 to 60° for both sub-wavelength- and micrometer-scale pyramid structures. The measured reflectance of the autocloned structure was less than 4% in the wavelength range from 400 to 1000 nm for incident angles from 0 to 60°. Therefore, the autocloning technique, combined with optical thin films and optical gradient structures, is a practical and compatible method for the fabrication of broad-bandwidth, omnidirectional antireflection structures on silicon solar cells.
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Type
journal article
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