A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating
Journal
25th Opto-Electronics and Communications Conference, OECC 2020
Date Issued
2020
Author(s)
Abstract
A 0.18-m CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA. ? 2020 IEEE.
Subjects
Avalanche photodiodes; Dark currents; Polysilicon; 0.18-m CMOS; Doping profiles; Low noise; Responsivity; Silicon avalanche photodiode; Standard CMOS; CMOS integrated circuits
Type
conference paper