Single-mode stimulated emission from prism-like GaN submicron cavities
Journal
Applied Physics Letters
Journal Volume
90
Journal Issue
14
Pages
141106
Date Issued
2007-01
Author(s)
Abstract
The authors report single mode stimulated emission from optical pumping of prismlike gallium nitride (GaN) with a side length of 0.75 μm. The cavities were formed by reaction-rate-limited photoetching that preserved the nonpolar {10 1- 0} or {11 2- 0} facets. They were characterized by an average quality factor above 103 and an equivalent facet reflectivity exceeding 98%, which allowed field amplification by repeated internal reflections in the transverse plane and field polarization along the c axis. Slight spectral blueshift (0.35 nm) and narrowing in linewidth (∼0.4 nm) were observed with increase of pump intensity. These observations manifested resonant coupling of the band edge emission to a single mode of the prismlike GaN cavity. © 2007 American Institute of Physics.
Type
journal article