Enhancement in the efficiency of light emission from silicon by a thin Al2 O3 surface-passivating layer grown by atomic layer deposition at low temperature

Journal

Journal of Applied Physics

Journal Volume

101

Journal Issue

3

Date Issued

2007

Author(s)

Chen, M.J.

Shih, Y.T.

Wu, M.K.

DOI

10.1063/1.2464190

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/491247

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-33847095026&doi=10.1063%2f1.2464190&partnerID=40&md5=e72ce9aa7837974a64b4d3b5ee03822e

Type

journal article