Growth and characterization of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy
Resource
Solid-State Electronics 39 (8): 1127-1132
Journal
Solid-State Electronics
Journal Volume
39
Journal Issue
8
Pages
1127-1132
Date Issued
1996
Date
1996
Author(s)
Abstract
The growth and fabrication of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) on GaAs (111)B substrate was studied. The surface morphology of (111)B GaAs epilayers strongly depends on the substrate misorientation and substrate temperature. There is only a very narrow window of substrate temperature for the (111)B GaAs growth. It is found that the base leakage current in the low current region can be suppressed by using 2°-off substrates, a precise control of substrate temperature and As/Ga BEP ratio. Additionally, because of the different surface properties along the (111)B direction, the surface recombination current of HBT on (111)B 2° off substrates is smaller than that on (100) GaAs at a growth temperature of 590°C. Copyright © 1996 Elsevier Science Ltd.
Type
journal article
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