Emerging x-ray metrology techniques with evolving front-end-of-line high-technology IC nodes
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Part Of
Proceedings of SPIE - The International Society for Optical Engineering
Start Page
45
Date Issued
2025-02-24
Author(s)
Editor(s)
Sendelbach, Matthew J.
Schuch, Nivea G.
Abstract
This article reviews non-destructive X-ray metrology for next-generation semiconductor devices, focusing on Front-End-of-Line (FEOL) processes. As IMEC highlights, the transition to Gate-All-Around (GAA) architectures demands precise, buried-depth metrology for HAR (High-Aspect-Ratio) 3D structures. Advanced architectures like nanosheets, forksheets, and complementary field-effect transistors (CFET) push current measurement techniques to their limits, requiring atomic-level accuracy in critical dimension (CD) measurements. Given the limitations of conventional metrology, this article explores emerging X-ray-based techniques, their development, and future potential.
Event(s)
Metrology, Inspection, and Process Control XXXIX 2025, San Jose, 24 February 2025 through 28 February 2025. Code 209146
Subjects
Front End of Line (FEOL)
Gate-All Around (GAA)
SAXS (Small Angle X-ray Scattering)
X-ray reflectometry
X-ray scatterometry
Publisher
SPIE
Type
conference paper