Turn-on Transient Analysis and Hysteresis Behavior of PD SOI MOS Devices Using 2D simulation
Date Issued
2008
Date
2008
Author(s)
Hsieh, Hung-Che
Abstract
This thesis reports the analysis of the turn on transient and hysteresis behavior of 40 nanometers PDSOI device consider the STI induce mechanical stress。 Chapter 1 introduces the characteristic of the SOI Device and the shallow trench isolation（STI）induce mechanical stress。 Chapter 2 discuss PDSOI turn-on transient analysis considering the different mechanical stress effect，based on the 2D simulation。 Chapter 3 discuss PDSOI hysteresis behavior considering the different mechanical stress effect and different temperature effect。 Chapter 4 is conclution。
Subjects
Turn-on Transient Analysis
Hysteresis
Type
thesis
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ntu-97-R95943146-1.pdf
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(MD5):44700b69c57c1187f7ed681a7a146857