Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
New user? Click here to register.
Have you forgotten your password?
Home
College of Science / 理學院
Physics / 物理學系
Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT
Details
Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT
Journal
Device Research Conference
Pages
25-26
Date Issued
2010
Author(s)
Chu, L.K.
Chu, R.L.
Lin, C.A.
Lin, T.D.
Chiang, T.H.
Kwo, J.
MINGHWEI HONG
DOI
10.1109/DRC.2010.5551961
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443381
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957606266&doi=10.1109%2fDRC.2010.5551961&partnerID=40&md5=9e8533e3850cbe2937d12da440c71d3f
Type
conference paper