Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT

Journal

Device Research Conference

Pages

25-26

Date Issued

2010

Author(s)

Chu, L.K.

Chu, R.L.

Lin, C.A.

Lin, T.D.

Chiang, T.H.

Kwo, J.

DOI

10.1109/DRC.2010.5551961

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443381

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957606266&doi=10.1109%2fDRC.2010.5551961&partnerID=40&md5=9e8533e3850cbe2937d12da440c71d3f

Type

conference paper