Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures
Details
Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures
Journal
Journal of Electronic Materials
Journal Volume
32
Journal Issue
5
Pages
375-381
Date Issued
2003
Author(s)
Cheng, Y.-C.
Tseng, C.-H.
Hsu, C.
Ma, K.-J.
Feng, S.-W.
Lin, E.-C.
Yang, C.C.
Chyi, J.-I.
CHIH-CHUNG YANG
DOI
10.1007/s11664-003-0161-8
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/506094
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037987824&doi=10.1007%2fs11664-003-0161-8&partnerID=40&md5=afdea0a9b5ca497eeebc19a181a15f9f
SDGs
[SDGs]SDG7
Type
conference paper