Study of Flexible Oxide Semiconductor Thin Film Transistors for Flexible Flat Panel Display
Date Issued
2009
Date
2009
Author(s)
Chien, Chih-Wei
Abstract
In recent years, flexible electronics have attracted a great deal of attention due to their various advantages such light weight, thin profile, and portability. Various novel applications of flexible displays, such as electronic paper, and wearable displays, are among the most significant technologies in the next generation. Moreover, the emerging conscience of environmental protection renders the reusable electronic as a viable solution. It is believed that flexible electronics and displays will appear and play an important role in the market soon. Oxide thin-film transistors (TFTs) could exhibit high mobility in the amorphous phase. In addition, their transparency in visible region can improve the pixel aperature ratio in flat-panel displays. These benefits of oxide TFTs render their highly potential to replace amorphous silicon (a-Si) TFTs. Most importantly, oxide TFTs could be fabricated at relatively low temperatures and thus are compatible with flexible electronics on plastic substrates. In this thesis, we use fully lithographic and etching processes, polyimide as the flexible substrate and the amorphous indium gallium zinc oxide (a-IGZO) as the active layer to fabricate flexible oxide TFTs. First, we analyze the effects of wet-etching and dry-etching techniques on device fabrication. Then, we demonstrate a technique of using the etch-stop layer to protect polyimide substrates and the other dielectric layers from erosion during the dry etching of electrodes. Finally, we characterize the variation of device performances after they are bended in the different bending curvatures. We show that these devices can function normally even after they are bended in the radius of curvature of a few millimeters.
Subjects
Flexible
Oxide Semiconductor
TFT
Type
thesis
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