Ga0.51In0.49P/InxGa1-xAs/GaA s doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
Journal
Microwave and Optical Technology Letters
Journal Volume
39
Journal Issue
1
Pages
56-62
Date Issued
2003
Author(s)
Abstract
Abstract In this paper, lattice‐matched Ga 0.51 In 0.49 P/GaAs and strained Ga 0.51 In 0.49 P/In 0.2 Ga 0.8 As doped‐channel FETs (DCFETs) were investigated in terms of DC and microwave performances, including frequency response, noise figure, power‐added efficiency (PAE), and output power. In addition, small‐signal and large‐signal models were created for designing monolithic microwave integrated circuits (MMICs). The heterostructures were both grown by gas‐source molecular beam epitaxy (GSMBE) on semi‐insulating (100) GaAs substrates. In situ reflection high‐energy electron diffraction (RHEED) was used to calibrate the growth rate of InP and GaP. Because of the high etching selectivity between Ga 0.51 In 0.49 P and In 0.2 Ga 0.8 As/GaAs, the uniformity of the measured electrical properties of our fabricated devices is quite satisfying, which indicates that these Ga 0.51 In 0.49 P/In x Ga 1− x As structures are very suitable for mass production. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 56–62, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11126
SDGs
Type
journal article