Monolithic power amplifiers covering 70-113 GHz
Resource
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Journal
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Pages
-
Date Issued
2000-06
Date
2000-06
Author(s)
DOI
N/A
Abstract
A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-μm AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, will also be addressed in this paper. Index Terms-GaAs, HEMT, millimeter wave, MMIC, power-amplifier module. © 2001 IEEE.
Other Subjects
High electron mobility transistors; Microprocessor chips; Microstrip lines; Millimeter wave devices; Monolithic microwave integrated circuits; Oscillators (electronic); Semiconducting aluminum compounds; Semiconducting indium gallium arsenide; Waveguides; Aluminum gallium arsenide; Power amplifiers
Type
journal article
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