Stable single-mode operation of an 850 nm VCSEL with a higher-order mode absorber formed by shallow Zn diffusion
Journal
IEEE Photonics Technology Letters
Journal Volume
13
Journal Issue
4
Pages
266-268
Date Issued
2001-04
Author(s)
Abstract
We report that an 850-nm vertical-cavity surface-emitting laser with a planar higher order mode absorber, formed by shallow Zn diffusion (<0.3μm), operated at stable single-mode over the entire drive current range. A device with a 5 × 5 μm2 absorber aperture and a 5 × 5 μm2 oxide confined active region showed a ∼0.8 mA threshold and a mode suppression ratio of 40 dB. The modeling indicates that the higher order modes will be suppressed strongly due to the much larger threshold gain, compared to that of the fundamental mode as long as the Zn diffusion depth outside the 5 × 5 μm2 absorber aperture is over ∼0.2 μm, which agrees well with the experimental results.
Subjects
850-nm vertical-cavity surface-emitting lasers; Mode suppression ratio; Single mode; Zn diffusion
Other Subjects
Bandwidth; Diffusion; Metallorganic chemical vapor deposition; Modulation; Semiconductor lasers; Zinc; Mode supression ratio; Vertical-cavity surface-emitting lasers (VCSEL); Laser modes
Type
journal article