A W-Band Monolithic Downconverter
Journal
IEEE Transactions on Microwave Theory and Techniques
Journal Volume
39
Journal Issue
12
Pages
1972-1979
Date Issued
1991
Author(s)
Chang, K.W.
Wang, H.
Tan, K.L.
Bui, S.B.
Chen, T.-H.
Dow, G.S.
Berenz, J.
Ton, T.-N.
Garske, D.C.
Lin, T.S.
Liu, L.C.T.
Abstract
The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic downconverter consists of a two-stage low-noise amplifier and a single-balanced mixer. The single-balanced mixer has been designed using the HEMT gate Schottky diodes inherent to the process. Measured results of the complete downconverter show conversion gain of 5.5 dB and a double-sideband noise figure of 6.7 dB at 94 GHz. Also presented is the downconverter performance characterized over the -35 degrees C to +65 degrees C temperature range. The downconverter design was a first pass success and has a high circuit yield.>
SDGs
Type
journal article