Quantum Size Effects in Low-Temperature Growth of Pb Islands on Si(100)-2?1 Surfaces
Date Issued
2008
Date
2008
Author(s)
Hsu, Chen-Chih
Abstract
The growth of Pb film on the Si(100)-2?1 surface has been investigated at low temperature using scanning tunneling microscopy. Three kinds of Pb islands are formed: hexagonal flat-top Pb(111) islands, rectangular flat-top Pb(100) islands, and rectangular 3D Pb islands. For flat-top Pb(111) islands, the thickness of islands is confined within the range of 4 to 10 atomic layers. Among these islands, those with heights of six layers are most abundant. This growth behavior is a result of the quantum size effect. Quantum well states are detected by scanning tunneling spectroscopy on the Pb islands of varying thickness. A simple model based on the infinite potential well can explain our results. Besides, flat-top Pb(100) islands and 3D islands rotate by 90? from one terrace to the next. This phenomenon implies that the structures of Pb(100) and 3D islands are influenced by the Si(100)-2?1 surface.
Subjects
Scanning Tunneling Microscopy
Quantum Size Effect
Scanning Tunneling Spectroscopy
Pb island
Quantum Well States
Type
thesis
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