Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells
Resource
IEEE Photonics Technology Letters 8 (11): 1456-1458
Journal
IEEE Photonics Technology Letters
Journal Volume
8
Journal Issue
11
Pages
1456-1458
Date Issued
1996
Author(s)
Abstract
Broad-band AlGaAs-GaAs superluminescent diodes are fabricated using asymmetric dual quantum wells. With a proper design of the quantum-well structure, the spectral width of the superluminescent diodes could be engineered. By choosing 40 /spl Aring/ and 75 /spl Aring/, respectively, for the two quantum wells, the spectrum remains bell-shaped and is broadened to 2/spl sim/3 times that of the conventional superluminescent diodes. The measured spectra show that there is no obvious preference on the transition in either well at any pumping current.
Type
journal article
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