High-efficiency InGaN red micro-LEDs for visible light communication
Journal
Photonics Research
Journal Volume
10
Journal Issue
9
Pages
1978
Date Issued
2022-08-01
Author(s)
Huang, Yu Ming
Peng, Chun Yen
Miao, Wen Chien
Chiang, Hsin
Lee, Tzu Yi
Chang, Yun Han
Singh, Konthoujam James
Daisuke Iida, Z.
Horng, Ray Hua
Chow, Chi Wai
Ohkawa, Kazuhiro
Chen, Shih Chen
Kuo, Hao Chung
Abstract
In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.
Subjects
EMITTING-DIODES; PERFORMANCE; EMISSION
Publisher
CHINESE LASER PRESS
Type
journal article